? 2013 ixys corporation, all rights reserved IXYK120N120C3 ixyx120n120c3 v ces = 1200v i c110 = 120a v ce(sat) 3.5v t fi(typ) = 90ns ds100451a(03/13) high-speed igbts for 20-50 khz switching features z optimized for low switching losses z square rbsoa z international standard packages z positive thermal coefficient of vce(sat) z avalanche rated z high current handling capability advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 500 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 25 a t j = 150 c 1.5 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c110 , v ge = 15v, note 1 2.9 3.5 v t j = 150 c 3.8 v symbol test conditions maximum ratings v ces t j = 25c to 175c 1200 v v cgr t j = 25c to 175c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 220 a i lrms terminal current limit 160 a i c110 t c = 110c 120 a i cm t c = 25c, 1ms 660 a i a t c = 25c 60 a e as t c = 25c 2 j ssoa v ge = 15v, t vj = 150c, r g = 1 i cm = 240 a (rbsoa) clamped inductive load @v ce v ces p c t c = 25c 1500 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in. f c mounting force (plus247) 20..120 /4.5..27 n/lb. weight to-264 10 g plus247 6 g 1200v xpt tm igbts genx3 tm g = gate e = emitter c = collector tab = collector to-264 (ixyk) e g c plus247 (ixyx) g tab tab e c g preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXYK120N120C3 ixyx120n120c3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 40 68 s c ie s 9810 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 560 pf c res 205 pf q g(on) 430 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 76 nc q gc 200 nc t d(on) 37 ns t ri 70 ns e on 6.2 mj t d(off) 167 ns t fi 90 ns e of f 4.2 7.0 mj t d(on) 37 ns t ri 62 ns e on 10.0 mj t d(off) 200 ns t fi 120 ns e off 5.3 mj r thjc 0.10 c/w r thcs 0.15 c/w inductive load, t j = 25c i c = 100a, v ge = 15v v ce = 0.5 ? v ces , r g = 1 note 2 inductive load, t j = 150c i c = 100a, v ge = 15v v ce = 0.5 ? v ces , r g = 1 note 2 to-264 outline terminals: 1 = gate 2,4 = collector 3 = emitter terminals: 1 - gate 2 - collector 3 - emitter plus247 tm outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2013 ixys corporation, all rights reserved IXYK120N120C3 ixyx120n120c3 fig. 1. output characteristics @ t j = 25oc 0 40 80 120 160 200 240 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 v ce - volts i c - amperes v ge = 15v 12v 10v 7v 8v 6v 9v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 2 4 6 8 10121416182022 v ce - volts i c - amperes v ge = 15v 12v 8v 9v 6v 7v 10v fig. 3. output characteristics @ t j = 150oc 0 40 80 120 160 200 240 01234567 v ce - volts i c - amperes v ge = 15v 12v 10v 8v 7v 6v 9v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 120a i c = 60a i c = 240a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 9 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 240 a t j = 25oc 120 a 60 a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYK120N120C3 ixyx120n120c3 fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 11. maximum transient thermal impedance aaaaa 0.2 fig. 7. transconductance 0 20 40 60 80 100 120 0 40 80 120 160 200 i c - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 10. reverse-bias safe operating area 0 40 80 120 160 200 240 280 100 300 500 700 900 1100 1300 v ce - volts i c - amperes t j = 150oc r g = 1 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 q g - nanocoulombs v ge - volts v ce = 600v i c = 120a i g = 10ma fig. 9. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2013 ixys corporation, all rights reserved IXYK120N120C3 ixyx120n120c3 fig. 12. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 6 7 8 9 12345678910 r g - ohms e off - millijoules 4 5 6 7 8 9 10 11 12 13 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 600v i c = 50a i c = 100a fig. 15. inductive turn-off switching times vs. gate resistance 60 80 100 120 140 160 180 200 12345678910 r g - ohms t f i - nanoseconds 100 200 300 400 500 600 700 800 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 600v i c = 100a i c = 50a fig. 13. inductive switching energy loss vs. collector current 1 2 3 4 5 6 7 50 55 60 65 70 75 80 85 90 95 100 i c - amperes e off - millijoules 1 3 5 7 9 11 13 e on - millijoules e off e on - - - - r g = 1 ? , v ge = 15v v ce = 600v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 1 2 3 4 5 6 7 8 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 2 4 6 8 10 12 14 e on - millijoules e off e on - - - - r g = 1 ? , v ge = 15v v ce = 600v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. collector current 60 80 100 120 140 160 180 200 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f i - nanoseconds 140 160 180 200 220 240 260 280 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 600v t j = 150oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 70 80 90 100 110 120 130 140 150 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 120 140 160 180 200 220 240 260 280 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 600v i c = 100a i c = 50a
ixys reserves the right to change limits, test conditions, and dimensions. IXYK120N120C3 ixyx120n120c3 ixys ref: ixy_120n120c3(9p) 03-01-12 fig. 19. inductive turn-on switching times vs. collector current 20 30 40 50 60 70 80 90 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r i - nanoseconds 33 34 35 36 37 38 39 40 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 600v t j = 150oc, 25oc fig. 20. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 32 34 36 38 40 42 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 600v i c = 100a i c = 50a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 12345678910 r g - ohms t r i - nanoseconds 24 32 40 48 56 64 72 80 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 600v i c = 50a i c = 100a
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